If the impurity content in metal alloy is increases, its president resistivity is (a) decreases. The Hall coefficient has the same sign as the charge carrier. In beryllium, cadmium and tungsten, however, the coefficient is positive. Answer: a. In the SI system the Hall coefficient unit is (volt m)/(amp tesla) or Ωm/T , however RH is often reported in hybrid units such as (volt cm)/(amp gauss). 10. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then: Both majority and minority carrier densities double, At room temperature, the current in an intrinsic semiconductor is due to, A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. The magnetic field is directly out of the page, represented by circled dots; it exerts a force on the moving charges, causing a voltage ε, the Hall emf, across the conductor. Optimum reverberation time for music is a) 0.5 to 1 sec b) 0 to 1 sec c) 1 to 2 sec d) above 5 sec. 2. For the highest doping level the Hall coefficient increases monotonically until the lowest used temperature. Hall coefficient definition is - the quotient of the potential difference per unit width of metal strip in the Hall effect divided by the product of the magnetic intensity and the longitudinal current density. View Answer Answer: must also be in kilograms 26 In a regression analysis if SSE = 200 and SSR = 300 , then ... B 0.6000. The order of band gap of insulator is, A silicon sample is uniformly doped with 10, Produced when Indium is added as an impurity to Germanium, Produced when phosphorous is added as an impurity to silicon. NEET Physics Mcq. Hall Effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. What is the Basic Logic Gate? The position of fermi level in p-type semiconductor, 7. It is a characteristic of the material from which the conductor is made, since its value depends on the type, number, and properties of the charge carriers that constitute the current. The electric current means a flow of charge. Similarly for p-type material, Using Equations (8.120) and , carrier concentration can be determined. Q8. Hall Effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. 11. Which of the following statement is true? The Hall Effect Principle has been named after an American physicist Edwin H. Hall (1855–1938). The carrier concentration in sample A at room temperature is: The hall coefficient is defined considering the applied field in Tesla and thickness of the specimen in Meter. It was discovered by Edwin Hall in 1879. What is the application of it? The unit of RH is m3/Coulomb. The Hall effect. Check the below NCERT MCQ Questions for Class 11 Physics Chapter 11 Thermal Properties of Matter with Answers Pdf free download. The conductivity of an extrinsic semiconductor with temperature (a) decreases (b) increases (c) remains constant Ans: c. 96. The effective mass of the electron is given by, 10. During that time, … 1 – Photo of Edwin H. Hall – Discovered Hall Effect PrincipleIn 1879, he discovered that when a current carrying conductor/ semiconductor is placed perpendicularly to a magnetic field, a voltage is generated that could be measured at right angles to the current path. Q7. Multiple Choice Questions with Answers on Refrigeration and Air-Conditioning - Set 07. Mobility expression for the electrons (μ n) and the holes (μ p), expressed in terms of Hall coefficient is given by, Where, σ n and σ p represent the conductivity due to the electrons and the holes, respectively. For a particular material the Hall coefficient was found to be zero. Moment of a magnet C. Magnetic susceptibility D Permittivity Magnetic susceptibility is the degree to which a material is magnetized by an external … A. One tesla [T — equal to one (newton sec)/(coulomb m) ] is equivalent to ten kilogauss (kG). The conductor have transport […] 2. Question is ⇒ The measurement of Hall coefficient of a semiconductor with one type of charge carriers gives the information about, Options are ⇒ (A) sign of charge carrier, (B) density of charge carrier, (C) both sign and density of charge carrier, (D) none of the above, (E) … c) The hall should not have any absorbing material d) The Reverberation time has to be optimum. 10. Q6. 4. An electric field of 10 V.cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 µsec. A. Permeability B. Measure Magnetic Flux Density This equation can be readily deduced from the equation of Hall voltage and is given by The Hall Effect voltage in intrinsic silicon is: The Hall coefficient of an intrinsic semiconductor is: Consider the following statements: pure germanium and pure silicon are examples of: Has an electric field directed along its length, The electron and hole concentrations in a intrinsic semiconductor are. Your email address will not be published. The two most widely used units for the Hall coefficients are SI units, m 3 /A-sec = m 3 /C, and the hybrid unit Ohm-cm/G (which combines the practical quantities volt and amp with the cgs quantities centimeter and Gauss). ½; C. 1; D. 2. Equations (8.118) and are same so, we have: where ρ is charge density. The range of regressioin coefficient is: Following are a few important terms in photometry: Luminous Intensity – It is defined as the amount of luminous flux emitted by a source per unit solid angle Ω. Abstract. Hall Effect • The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. Which one of the following has minimum absorption coefficient a) Glass b) felt c) open windows d) Wooden floor. D All of the above. The relation between drift velocity (vd) and current (I) is given by, 11. Carrier concentration, Hall mobility, Hall coefficient, and sheet resistance values were obtained by four-point probe technique using Hall effect measurement system in a magnetic field strength of 0.556 T and these values were listed in Table 3. All units were converted to SI units. Measurement of Hall coefficient in a semiconductor provides information on the: Mass and concentration of charge carriers, Sign and concentration of charge carriers. d. Numerical coefficient . C 0.4000. The motivation for compiling this table is the existence of conflicting values in the " popular" literature in which tables of Hall coefficients are given. MCQ Questions for Class 11 Physics with Answers were prepared based on the latest exam pattern. Engineering Books, Study Material, Tech Buzz, 2. « Back CONTENTS Next » 1. MCQ .1 . Solution: R H =-1/ne. So if you take an intrinsic sample of silicon the coefficients for the electron and the hole will differ only by the sign. The unit of energy in MKS system is (A) Volt (B) Erg (C) Ohm (D) Joule. If a charge q is moving along x axis and direction of magnetic filed is along y-axis then what will be direction of Lorentz force? Modes of Heat Transfer- Conduction, Convection, Radiation Heat and Mass Transfer MCQ Objective Question and Answers Part 2 Heat and Mass Transfer MCQ Objective Question and Answers Part 3 Heat Transfer Analysis of Engine Cylinder Fins Having Triangular Shape Heat Transfer Online Notes , Objective and Interview Questions Thermodynamics Basic Objective Type Question And Answers … Explanation: The unit of absorptivity is L mol-1 cm-1. The Hall coefficient of (A) at room temperature is 4×10 –4 m 3 coulomb –1. Hence, absorption has no unit. The upper and lower frequency limits of the laser will be respectively: The intrinsic carrier density at 300K is 1.5 x 10, A high concentration of acceptors below the contact, A high concentration of donors below the contact. For most metals, the Hall coefficient is negative, as expected if the charge carriers are electrons. b. Attenuation coefficient . 95. a) L mol-1 cm-1 b) L gm-1 cm-1 c) Cm d) No unit. The probability that an electron in a metal occupies the Fermi-level, at any temperature (>0 K) is: Measurement of Hall coefficient enables the determination of: Type of conductivity and concentration of charge carriers, Temperature coefficient and thermal conductivity. c) The saturation voltage V CE for silicon transistor is same as that for germanium. D can be any units. R H = -1/5 x 10 28 x 1.6 x 10-19. Various dimensioning systems- Engineering Drawing, Working principle of Bell Coleman air refrigeration system, Kelvin‐Planck and Clausius statements of second law of thermodynamics, Different types of gears used for power transmission. Table 1 Hall Coefficients and Number of electrons per unit volume of Materials The Hall coefficient (or hall constant) is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. The Table below gives the Hall coefficients of a number of metals and semiconductors at room temperature with number of electrons per unit volume. Hall effect, development of a transverse electric field in a solid material when it carries an electric current and is placed in a magnetic field that is perpendicular to the current. It was first introduced to the world by him in 1879.Fig. If the energy gap of a semiconductor is 1.1 e V it would be: The conductivity of an intrinsic semiconductor is given by (symbols have the usual meanings): Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: In an intrinsic semiconductor, the mobility of electrons in the conduction band is: Less than the mobility of holes in the valence band, Greater than the mobility of holes in the valence band, The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. 10 to 20 pieces, calculate the coefficient of price elasticity of supply. R H = … Overview of Computer Aided Design (CAD) | Advantages | Co‐ordinate systems | drawing commands, Solved Numericals of Engineering Drawing – ED 22 Solved Questions, What is dimensioning? Describe the OR, AND, NAND gate with the help of the truth table. The band gap of a conductor is given by, 12. MCQ on Photometry. One torr is equal to (a) 1 Nm – 2 (b) 1 mm of Hg (c) 1 atm pressure (d) 1 cm of Hg. The dimensional formula of energy and torque respectively are (a) This maximum seems to correspond very well to the metal insulator transition which was discussed in section 2.4.2. The Hall coefficient of (A) at room temperature is 4×10–4 m3 coulomb–1. Heat & Mass Transfer MCQ Questions Answers – Mechanical Engineering 1) Which of the following material has least thermal conductivity at room temperature ? Which of the following metal has lowest temperature coefficient of resistance? If p0 is the concentration of holes and q is the magnitude of the charge on a hole, the Hall Coefficient is given by. Hydrology MCQ Questions Answers – Civil Engineering (CE) 1) The % of earth covered by oceans is about a) 31% b) 51% c) 71% d) 97% 2) The average annual rainfall over the whole of india is estimated as a) 189 cm b) 319 cm c) 89 cm d) 119 cm 3) The percentage of ... Read more Hydrology MCQ Questions Answers Civil Engineering The ribbon carries a current of 100 A from left to right, and it lies in a uniform magnetic field of magnitude 1.5 T. Correct Answer. ¼. a) The saturation voltage V CF of silicon transistor is more than germanium transistor. The indifference curve means: In this calculator, you can calculate the Hall coefficient of a free electrons in solid semiconductor with known values. The Hall coefficient is just the reciprocal of the total current-carrying charge in the conductor, and has the same sign as the sign of this charge. • The Hall coefficient is defined as the ratio of the induced electric field Electron volt is a unit of (a) Potential difference (b) Electric current (c) Electronic charge (d) Energy. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T = 0K and for E > EF, which one will be correct, Ans. The mobility is given by (notations have their usual meaning): Hall effect is observed in a specimen when it (metal or a semiconductor) is carrying current and is placed in a magnetic field. Practice Test: Question Set - 07 1. This phenomenon was discovered in 1879 by the U.S. physicist Edwin Herbert Hall. Mainly Lorentz force is responsible for Hall effect.All of we know that when we place a current carrying conductor inside a magnetic field, the conductor experiences a mechanical force to a direction depending upon the direction of magnetic field and the direction of current in the conductor. What is the unit of molar absorptivity or absorptivity which is used to determine absorbance A in Beer Lambert’s formula? The Hall coefficient is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. Calculate the number of lamps required taking a depreciation factor of 1.3 and utilization coefficient of 0.5 given that the output of the lamp to be used is … In p-type semiconductors, holes are the majority carriers. DE Patent 4308375 The Hall coefficient is defined as the ratio of the induced electric field to the product of Log in. (a) Electrons move to the left in this flat conductor (conventional current to the right). The total utility coincides with the marginal utility: A. for the first unit consumed; B. only for the irrational consumer; C. at the level of the last unit consumed; D. at the saturation point. Multiple Choice Questions (MCQ) on Electrical Engineering Materials for Electrical Engineering ... (d) none of the above . The position of fermi level in n-type semiconductor, 8. (b) increases. Multiple Choice Questions and Answers By Sasmita January 9, 2020 Multiple Choice Questions and Answers on Semiconductor Theory In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: The Hall coefficient is dependant on the charge and the concentration of the carriers involved. The material is a) Insulator b) Metal c) Intrinsic semiconductor d) None of the above For a particular material the Hall coefficient was found to be zero. (d) Kanthol. The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. The units of absorptivity, distance, and concentration cancel each other. The position of Fermi level in intrinsic semiconductor, 9. Hall effect measurements The resistivity and the Hall coefficient of pure aluminum and Al with l at.% Si have been measured at 20 °C (293 K) as ρ = 2.65 μΩ cm, RH-_3.51 × 10-11 m3 Ci for Al and ρ = 3.33 μΩ cm. Hint: Look the ”Fleming Right Hand Palm Rule” for direction of Lorentz force, 6. If X is measured in yours and Y is measured in minutes, then correlation coefficient has the unit: (a) Hours (b) Minutes (c) Both (a) and (b) (d) No unit . What is a diode? The Hall coefficient, R H, is in units of 10-4 cm 3 /C = 10-10 m 3 /C = 10-12 V.cm/A/Oe = 10-12. ohm.cm/G. 3. The best-fit equations and corresponding R2 values are Bismuth: VHall = −6.12× 10−8β +4.77× 10−7 R2 = 0.7949 Silver: VHall = −2.00× 10 −9β −7.04×10 7 R2 = 0.9665 The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. (a) Copper. c. Propagation coefficient . Multiple Choice Question (MCQ) of Electronics page-17:241. Figure \(\PageIndex{2}\) shows a silver ribbon whose cross section is 1.0 cm by 0.20 cm. Hall Coefficient Calculator. The material is (a) insulator (6) metal (c) intrinsic semiconductor (d) none of the above Ans: b. Multiple Hall effects superposition may be realized by placing multiple voids within the Hall element, with current and voltage contacts on the boundary of each void. a. Attenuation ... Phase-shift coefficient . The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. RH =ー for the pure metal and the alloy are 0.4049 nm and 0.4074 nm. C Hint:Fermi Dirac Distribution function is given by, 3. The Hall coefficient of (A) at room temperature is 4×10, If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is. Another best-fit line was found for each sample using least squares fitting. For a particular material the Hall coefficient was found to be zero. The resultant electric field inside the specimen will be in: A direction normal to both current and magnetic field, A direction anti parallel to magnetic field. Order of band gap in semiconductor is given by, 13. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T > 0K and E = EF, which one will be correct, 4. 5. Figure 1. (c) remain same. (b) Aluminium. (c) Gold. The Hall effect which is used to measure the carrier concentration in semiconductors can be applied in a Hall probe to measure the magnetic field. We have provided Thermal Properties of Matter Class 11 Physics MCQs Questions with Answers to help students understand the concept very well. The basic unit used in photometry is the lumen. Thus, the Hall coefficient is negative for n-type material. Ans: c. 2. Question is ⇒ Measurement of hall coefficient enables the determination of, Options are ⇒ (A) mobility of charge carriers, (B) type of conductivity and concentration of charge carriers, (C) temperature coefficient and concentration of charge carriers, (D) fermi level and forbidden energy gap, (E) , Leave your comments or Download question paper. The Hall Potential in a Silver Ribbon. 94. The charge carrier in a normal electric current, the electron, is negative, and as a result the Hall coefficient is negative. When the samples are highly overdoped, the R H (T) maximum does not exist. A process by which we estimate the value of dependent variable on the basis of one or more independent . A transmission unit used in a number of Northern European countries as an alternative to the decibel is _____. (or) E H = R H J x B _____ (8.119) where R H = Hall coeffi cient. The hall coefficient is defined considering the applied field in Tesla and thickness of the specimen in Meter. In this graph, it is seen that T MAX decreases with increasing doping. The carrier concentration in sample A at room temperature is: The material is a) Insulator b) Metal c) Intrinsic semiconductor d) None of the above 3. In p-type semiconductors, holes are the majority carriers. B. The mobility (in cm. Problem 1: Find Hall coefficient for 5 x 10 28 atom / m 3 in copper block. A hall 30 m long and 12 m wide is to be illuminated and the illumination required is 50 meter-candles. 3. View Answer Answer: 0.6000 27 If the correlation coefficient is a positive value, then the slope of the regression line A must also be positive. b) The saturation voltage V CE for germanium transistor is more than silicon transistor. MCQ .52 . (d) none of the above. Sign as the charge carriers are electrons position of Fermi level in n-type semiconductor 7. 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If you take an intrinsic sample of silicon transistor 28 x 1.6 x 10-19 1855–1938 ) V for. Majority carriers in all the metals and n-type semiconductors, 6 in Tesla thickness. Electrons per unit volume discussed in section 2.4.2 semiconductors, holes are the majority carriers,. Product of NEET Physics MCQ 28 x 1.6 x 10-19 after an American physicist Edwin Hall...